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IXGT32N170 IGBT Power Module Transistors 1700V 75A 350W TO268

KZ TECHNOLOGY (HONGKONG) LIMITED
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IXGT32N170 IGBT Power Module Transistors 1700V 75A 350W TO268

Place of Origin : Original

MOQ : Negotiable

Price : Negotiable

Delivery Time : Negotiable

Payment Terms : T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 100000

Part Number : IXGT32N170

Manufacturer : IXYS

Description : IGBT 1700V 75A 350W TO268

Category : Transistors - IGBTs - Single

Family : Transistors - IGBTs - Single

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IXGT32N170 IGBT Power Module Transistors IGBTs Single

IXGT32N170 Specifications

Part Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 75A
Current - Collector Pulsed (Icm) 200A
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 32A
Power - Max 350W
Switching Energy 11mJ (off)
Input Type Standard
Gate Charge 155nC
Td (on/off) @ 25°C 45ns/270ns
Test Condition 1020V, 32A, 2.7 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package TO-268
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IXGT32N170 Packaging

Detection

IXGT32N170 IGBT Power Module Transistors 1700V 75A 350W TO268IXGT32N170 IGBT Power Module Transistors 1700V 75A 350W TO268IXGT32N170 IGBT Power Module Transistors 1700V 75A 350W TO268IXGT32N170 IGBT Power Module Transistors 1700V 75A 350W TO268


Product Tags:

IXGT32N170

      

IGBT Power Module 1700V

      

IGBT Power Module 350W

      
China IXGT32N170 IGBT Power Module Transistors 1700V 75A 350W TO268 factory

IXGT32N170 IGBT Power Module Transistors 1700V 75A 350W TO268 Images

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