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SI1922EDH-T1-GE3 Field Effect Transistor Transistors FETs MOSFETs Arrays

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Part Number : SI1922EDH-T1-GE3

Manufacturer : Vishay Siliconix

Description : MOSFET 2N-CH 20V 1.3A SOT-363

Category : Transistors - FETs, MOSFETs - Arrays

Family : Transistors - FETs, MOSFETs - Arrays

Series : TrenchFET®

Place of Origin : Original

MOQ : Negotiable

Price : Negotiable

Delivery Time : Negotiable

Payment Terms : T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 100000

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Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	1.3A
Rds On (Max) @ Id, Vgs	198 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1.25W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-70-6 (SOT-363)
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.

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SI1922EDH-T1-GE3 Field Effect Transistor Transistors FETs MOSFETs Arrays

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