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BSM180D12P2C101 Field Effect Transistor Transistors FETs MOSFETs Arrays

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Part Number : BSM180D12P2C101

Manufacturer : Rohm Semiconductor

Description : MOSFET 2N-CH 1200V 180A MODULE

Category : Transistors - FETs, MOSFETs - Arrays

Family : Transistors - FETs, MOSFETs - Arrays

Place of Origin : Original

MOQ : Negotiable

Price : Negotiable

Delivery Time : Negotiable

Payment Terms : T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 100000

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Part Status	Active
FET Type	2 N-Channel (Half Bridge)
FET Feature	Standard
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	180A
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	23000pF @ 10V
Power - Max	1130W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	-
Package / Case	Module
Supplier Device Package	Module
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.

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BSM180D12P2C101 Field Effect Transistor Transistors FETs MOSFETs Arrays

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