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RQ3E100BNTB Field Effect Transistor Transistors FETs MOSFETs Single

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Part Number : RQ3E100BNTB

Manufacturer : Rohm Semiconductor

Description : MOSFET N-CH 30V 10A HSMT8

Category : Transistors - FETs, MOSFETs - Single

Family : Transistors - FETs, MOSFETs - Single

Place of Origin : Original

MOQ : Negotiable

Price : Negotiable

Delivery Time : Negotiable

Payment Terms : T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 100000

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Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 15V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Rds On (Max) @ Id, Vgs	10.4 mOhm @ 10A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HSMT (3.2x3)
Package / Case	8-PowerVDFN
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.

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RQ3E100BNTB Field Effect Transistor Transistors FETs MOSFETs Single

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