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TPN1R603PL,L1Q Field Effect Transistor Transistors FETs MOSFETs Single

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TPN1R603PL,L1Q Field Effect Transistor Transistors FETs MOSFETs Single

Part Number : TPN1R603PL,L1Q

Manufacturer : Toshiba Semiconductor and Storage

Description : X35 PB-F POWER MOSFET TRANSISTOR

Category : Transistors - FETs, MOSFETs - Single

Family : Transistors - FETs, MOSFETs - Single

Series : U-MOSIX-H

Place of Origin : Original

MOQ : Negotiable

Price : Negotiable

Delivery Time : Negotiable

Payment Terms : T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 100000

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TPN1R603PL,L1Q Specifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 10V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 15V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Rds On (Max) @ Id, Vgs 1.2 mOhm @ 80A, 10V
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance
Package / Case 8-PowerVDFN
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

TPN1R603PL,L1Q Packaging

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TPN1R603PL,L1Q Field Effect Transistor Transistors FETs MOSFETs SingleTPN1R603PL,L1Q Field Effect Transistor Transistors FETs MOSFETs SingleTPN1R603PL,L1Q Field Effect Transistor Transistors FETs MOSFETs SingleTPN1R603PL,L1Q Field Effect Transistor Transistors FETs MOSFETs Single


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TPN1R603PL,L1Q Field Effect Transistor Transistors FETs MOSFETs Single Images

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